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Proceedings Paper

RHEED study of oxygen ion implantation effects on GaAs surface
Author(s): Maria Dabrowska-Szata; Zdzistaw Synowiec
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Paper Abstract

The GaAs(001) surfaces were submitted to 10 - 100 keV oxygen ion bombardment at room temperature and then they were thermally annealed in order to restore the initial topography. The present paper is motivated by a desire to correlate the electronic properties of GaAs crystal to its structure. It is the main purpose of this work to investigate the nature of damage conducted by the implanted oxygen ion and to show the changes in the structure of GaAS(001) surface resulting from surface disorder due to ion implantation.

Paper Details

Date Published: 8 April 1996
PDF: 4 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238136
Show Author Affiliations
Maria Dabrowska-Szata, Technical Univ. of Wroclaw (Poland)
Zdzistaw Synowiec, Technical Univ. of Wroclaw (Poland)

Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

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