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Proceedings Paper

Heteroepitaxy of CdTe on Si substrates in view of infrared and x-ray detection
Author(s): Jean-Pierre Faurie; Leo Anthony Almeida; Yuanping Chen; R. Sporken; Sivalingam Sivananthan
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Paper Abstract

CdTe can be grown directly on silicon substrates by Molecular Beam Epitaxy. On Si(001), CdTe grows in the (111)B orientation. The homo-orientation on Si(001), Si(111) and Si(211) can be obtained if a buffer ZnTe epilayer is grown prior to CdTe growth. A systematic study of the growth of CdTe(111)B on Si(001) surface with different atomic step structures, defined by the miscut tilt angle (theta) and the tilt direction (phi) , has been carried out. Double domain and twin formation is very sensitive to tilt parameters. When growth conditions are optimized, single domain twin free layers are obtained with suitable tilt values. The best films which exhibit double crystal X-ray rocking curve FWHM of 60 arcsec have for tilt parameters (theta) equals 1 degree(s) and (phi) equals 30 degree(s). The heterointerface formation has been studied by photoelectron spectroscopy with synchrotron radiation. It was found that in the very first step of the growth, up to one monolayer of Te is absorbed on Si(001).

Paper Details

Date Published: 12 April 1996
PDF: 13 pages
Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237710
Show Author Affiliations
Jean-Pierre Faurie, Univ. of Illinois/Chicago (United States)
Leo Anthony Almeida, Univ. of Illinois/Chicago (United States)
Yuanping Chen, Univ. of Illinois/Chicago (United States)
R. Sporken, Univ. of Illinois/Chicago (United States)
Sivalingam Sivananthan, Univ. of Illinois/Chicago (United States)

Published in SPIE Proceedings Vol. 2685:
Photodetectors: Materials and Devices
Manijeh Razeghi, Editor(s)

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