
Proceedings Paper
Modeling high-speed MSM photodetectorsFormat | Member Price | Non-Member Price |
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Paper Abstract
A feature of metal-semiconductor-metal (MSM) photodetectors is their low capacitance. In this paper, a new design formula is presented for the capacitance per unit area of an MSM photodetector. A comprehensive circuit model is also described which incorporates the optoelectronic conversion within a larger model which in turn accommodates the transmission line effects of the interdigitated structure. These models can be used to optimize the design of a receiver employing an MSM photodetector.
Paper Details
Date Published: 12 April 1996
PDF: 4 pages
Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237701
Published in SPIE Proceedings Vol. 2685:
Photodetectors: Materials and Devices
Manijeh Razeghi, Editor(s)
PDF: 4 pages
Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237701
Show Author Affiliations
Laurence W. Cahill, La Trobe Univ. (Australia)
Published in SPIE Proceedings Vol. 2685:
Photodetectors: Materials and Devices
Manijeh Razeghi, Editor(s)
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