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Proceedings Paper

UV photodetectors based on AlxGa1-xN grown by MOCVD
Author(s): Adam W. Saxler; Danielle Walker; Xiaolong Zhang; Patrick Kung; Jianren Xu; Manijeh Razeghi
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Paper Abstract

Metalorganic chemical vapor deposition was used to deposit AlxGa1-xN active layers with varying aluminum compositions on basal plane sapphire substrate. AlxGa1-xN (x < 0.5) ultraviolet photodetectors have been fabricated and characterized with cut-off wavelengths as short as 260 nm. Carrier lifetimes on the order of 10 milliseconds were estimated from frequency dependent measurements of the responsivity.

Paper Details

Date Published: 12 April 1996
PDF: 8 pages
Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237697
Show Author Affiliations
Adam W. Saxler, Northwestern Univ. (United States)
Danielle Walker, Northwestern Univ. (United States)
Xiaolong Zhang, Northwestern Univ. (United States)
Patrick Kung, Northwestern Univ. (United States)
Jianren Xu, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 2685:
Photodetectors: Materials and Devices
Manijeh Razeghi, Editor(s)

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