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Proceedings Paper

Vertical-cavity surface-emitting lasers come of age
Author(s): Robert A. Morgan; John A. Lehman; Mary K. Hibbs-Brenner
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Paper Abstract

This manuscript reviews our efforts in demonstrating state-of-the-art planar, batch-fabricable, high-performance vertical-cavity surface-emitting lasers (VCSELs). All performance requirements for short-haul data communication applications are clearly established. We concentrate on the flexibility of the established proton-implanted AlGaAs-based (emitting near 850 nm) technology platform, focusing on a standard device design. This structure is shown to meet or exceed performance and producibility requirements. These include > 99% device yield across 3-in-dia. metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across a > 100-nm range. Recent progress in device performance [low threshold voltage (Vth equals 1.53 V); threshold current (Ith equals 0.68 mA); continuous wave (CW) power (Pcw equals 59 mW); maximum and minimum CW lasing temperature (T equals 200 degree(s)C, 10 K); and wall-plug efficiencies ((eta) wp equals 28%)] should enable great advances in VCSEL-based technologies. We also discuss the viability of VCSELs in cryogenic and avionic/military environments. Also reviewed is a novel technique, modifying this established platform, to engineer low-threshold, high-speed, single- mode VCSELs.

Paper Details

Date Published: 10 April 1996
PDF: 12 pages
Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); doi: 10.1117/12.237688
Show Author Affiliations
Robert A. Morgan, Honeywell Technology Ctr. (United States)
John A. Lehman, Honeywell Technology Ctr. (United States)
Mary K. Hibbs-Brenner, Honeywell Technology Ctr. (United States)

Published in SPIE Proceedings Vol. 2683:
Fabrication, Testing, and Reliability of Semiconductor Lasers
Mahmoud Fallahi; S. C. Wang, Editor(s)

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