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Proceedings Paper

High-power laser diodes at wavelength 1.06 um grown by MOCVD
Author(s): Alexander A. Chelny; Igor Dmitrievich Zalevsky; Peter V. Bulaev; M. Sh. Kobyakova
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Paper Abstract

In this paper MOCVD epitaxial growth of InGaAs/GaAs strained quantum well lasers lasing at (lambda) equals 1.06 mkm will be discussed. Series of Single Quantum Well Separate Confinement Heterostructures were grown with different quantum well thickness d and active layer InxGa1-xAs composition x. Luminescence characteristics were investigated with approaching of active layer thickness to critical value. At the near critical thickness of active layer splitting of the electroluminescence peak was observed. Also steplike changing of emitting wavelength was detected during measurements of luminescence wavelength versus active layer thickness d. Emitting characteristics and laser diodes degradation character were explored. Express selection criteria of laser structures making possible to manufacture laser diodes with lifetime more than 1000 hours at operation power 1 Watt in cw multimode regime are discussed.

Paper Details

Date Published: 10 April 1996
PDF: 7 pages
Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); doi: 10.1117/12.237685
Show Author Affiliations
Alexander A. Chelny, Sigma Plus Co. (Russia)
Igor Dmitrievich Zalevsky, Sigma Plus Co. (Russia)
Peter V. Bulaev, Sigma Plus Co. (Russia)
M. Sh. Kobyakova, Sigma Plus Co. (Russia)

Published in SPIE Proceedings Vol. 2683:
Fabrication, Testing, and Reliability of Semiconductor Lasers
Mahmoud Fallahi; S. C. Wang, Editor(s)

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