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Proceedings Paper

Highly reliable 685-nm 50-mW visible lasers with Zn-diffused windows
Author(s): Hitoshi Tada; Ken Harada; Akihiro Shima; Shin'ichi Yamamura; Munehiro Kato; T. Motoda; Y. Nagai; Kouki Nagahama; Mutuyuki Otsubo; Masao Aiga
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Paper Abstract

High-power, highly reliable 685 nm Zn-diffused type window structure laser diodes (LDs) are developed using 3-inch (phi) wafers. The lasers have exhibited over 7000 hours operation under the condition of 60 degrees Celsius, 50 mW. In addition, over 4000 hours operation under the condition of 60 degrees Celsius, 60 mW is also achieved. These LDs are fabricated by well controlled 3-inch full wafer processing. The window regions near both facets consist of the disordered GaInP wells formed by an open-tube solid-phase Zn-diffusion technique. It is confirmed that highly uniform characteristics are achieved over the 3-inch wafer. Moreover, low astigmatic distances of less than 3 micrometer m are obtained in the range of 3 - 50 mW in spite of the window structure.

Paper Details

Date Published: 12 April 1996
PDF: 9 pages
Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); doi: 10.1117/12.237647
Show Author Affiliations
Hitoshi Tada, Mitsubishi Electronic Corp. (Japan)
Ken Harada, Mitsubishi Electronic Corp. (Japan)
Akihiro Shima, Mitsubishi Electronic Corp. (Japan)
Shin'ichi Yamamura, Mitsubishi Electronic Corp. (Japan)
Munehiro Kato, Mitsubishi Electronic Corp. (Japan)
T. Motoda, Mitsubishi Electronic Corp. (Japan)
Y. Nagai, Mitsubishi Electronic Corp. (Japan)
Kouki Nagahama, Mitsubishi Electronic Corp. (Japan)
Mutuyuki Otsubo, Mitsubishi Electronic Corp. (Japan)
Masao Aiga, Mitsubishi Electronic Corp. (Japan)

Published in SPIE Proceedings Vol. 2682:
Laser Diodes and Applications II
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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