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Proceedings Paper

Photochemical engineering of silicon dioxide
Author(s): Parthiv Patel; Vishal Nayar; F. Micheli; Ian W. Boyd
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Paper Abstract

The growth of large area and directly patterned oxides on silicon using a variety of photon wavelengths is described. In particular the drive towards low temperature and high quality ultrathin layers will be emphasised. Towards this goal we show that U. V. photons initiate more efficient growth than does visible radiation. 1.

Paper Details

Date Published: 1 October 1990
PDF: 11 pages
Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); doi: 10.1117/12.23720
Show Author Affiliations
Parthiv Patel, Univ. College London (United Kingdom)
Vishal Nayar, Univ. College London (United Kingdom)
F. Micheli, Univ. College London (United Kingdom)
Ian W. Boyd, Univ. College London (United Kingdom)

Published in SPIE Proceedings Vol. 1352:
1st Intl School on Laser Surface Microprocessing
Ian W. Boyd; Vitali I. Konov; Boris S. Luk'yanchuk, Editor(s)

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