A new concept for silicon microsensors based on porous EIS (Electrolyte-Insulator- Semiconductor) structures is presented. The porous sensor was prepared by anodic etching of n-doped silicon and subsequent deposition of a dielectric layer of SiO₂. Experimental conditions were investigated to realize a well-defined macroporous formation of the porous silicon. To compare the chemical sensor properties with similar built-up planar Si/SiO₂ structures, C/V (Capacitance-Voltage) measurements have been performed. The porous EIS structures have been characterized by SEM (Scanning Electron Microscopy), XPS (X-ray Photoelectron Spectroscopy) and cyclic voltammetry. This solid-state technology allows the preparation of transducer materials for pH microsensors.

Date Published: 26 April 1996
PDF: 6 pages
Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); doi: 10.1117/12.237125

Published in SPIE Proceedings Vol. 2779:
3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials
Pierre Francois Gobin; Jacques Tatibouet, Editor(s)