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Proceedings Paper

Laser-stimulated interdiffusion of components in a CdTe-CdxHg1-x Te structure
Author(s): Yu. A. Bychkov; F. Kh. Mirzoyev; Vladislav Ya. Panchenko
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Paper Abstract

The CdTe and HgTe narrow-banth-gap seminconductor compounds and the solid solutions based on them (CdHg Te, 0.1 < x < 0.3) are promising materials for the manufacture of a number of semiconductor devices, such as IR radiation detectors, light-emitting diodes, and heterojunction lasers. This is precisely Ue eason why these materials have attracted widespread attention. At. present, laser radiation is being extensively used for altering the prope ties and structure of semiconductor layers. In this paper, we present the results of theoretical studies into the possibility of using lasei pulses to accele rat.e diffusion processes in structures the type of CdTe-CdHgTe.

Paper Details

Date Published: 1 October 1990
PDF: 3 pages
Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); doi: 10.1117/12.23702
Show Author Affiliations
Yu. A. Bychkov, Research Ctr. for Laser Technology (Russia)
F. Kh. Mirzoyev, Research Ctr. for Laser Technology (Russia)
Vladislav Ya. Panchenko, Research Ctr. for Laser Techno (Russia)

Published in SPIE Proceedings Vol. 1352:
1st Intl School on Laser Surface Microprocessing
Ian W. Boyd; Vitali I. Konov; Boris S. Luk'yanchuk, Editor(s)

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