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Proceedings Paper

Excimer laser assisted deposition of SiO2-structures on semiconductor substrates from siliconorganic films
Author(s): Vladimir G. Ageev; Dang Quoc Trung; Vitali I. Konov; A. V. Kuzmichov; A. I. Maslakov; Leonid V. Velikov; D. Yu. Zaroslov
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Paper Abstract

New approach to the surface patterning is considered based on UV laser assisted decomposition of films of silicon organic compounds (SOC). Basic regimes of films processing are studied :the direct laser produced transformation of Soc into the silicon oxide, self— developing (ablating) as well as conventional UV laser lithography. Submicron structures of high quality silicon dioxide are realized

Paper Details

Date Published: 1 October 1990
PDF: 7 pages
Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); doi: 10.1117/12.23695
Show Author Affiliations
Vladimir G. Ageev, Institute of General Physics (Russia)
Dang Quoc Trung, Institute of General Physics (Russia)
Vitali I. Konov, Institute of General Physics (Russia)
A. V. Kuzmichov, Institute of General Physics (Russia)
A. I. Maslakov, Institute of Physics and Technology (Russia)
Leonid V. Velikov, Institute of Physics and Technology (Russia)
D. Yu. Zaroslov, Institute of Physics and Techn (Russia)

Published in SPIE Proceedings Vol. 1352:
1st Intl School on Laser Surface Microprocessing
Ian W. Boyd; Vitali I. Konov; Boris S. Luk'yanchuk, Editor(s)

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