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Proceedings Paper

Low-temperature modulation characteristics of a quantum well laser
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Paper Abstract

We have systematically studied modulation characteristics of an InGaAsP multiple quantum well laser diode in the temperature range between 300 K to 10 K. We show that the modulation bandwidth increases dramatically at lower temperature which can be attributed to dramatic increase of differential gain. Modulation characteristics at temperatures below 100 K show an additional low frequency roll off that cannot be accounted for by device parasitics. We discuss the origin of this effect in the context of the device carrier transport effects.

Paper Details

Date Published: 1 April 1996
PDF: 7 pages
Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); doi: 10.1117/12.236949
Show Author Affiliations
Rang-Chen Yu, SDL, Inc. (United States)
Radhakrishnan Nagarajan, SDL, Inc. (United States)
John Edward Bowers, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 2684:
High-Speed Semiconductor Laser Sources
Paul A. Morton; Deborah L. Crawford, Editor(s)

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