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Proceedings Paper

Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs
Author(s): O. Kjebon; Richard Schatz; Sebastian Lourdudoss; Stefan Nilsson; Bjoern Stalnacke
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Paper Abstract

Results from modulation measurements of 40 high-speed multi quantum well (MQW) lasers ((lambda) equals 1.55 micrometer) of various designs are presented. By fitting the careful calibrated measurements, both magnitude and phase, to an analytical transfer function we were able to determine if a certain laser was limited by thermal effects, parasitic-like effects, or nonlinear gain effects. We found that most of the devices in the study were limited by thermal effects and/or contact parasitics. The parasitics were found to be determined by the width of the high-doped contact layer and cladding layers below the metallic contact. It was also found that a high doping of the separate confinement heterostructure (SCH) layers decreases the damping of the relaxation peak since it facilitates the carrier transport. Improved contact design and high doped SCH-layers resulted in modulation bandwidths of around 24 GHz.

Paper Details

Date Published: 1 April 1996
PDF: 15 pages
Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); doi: 10.1117/12.236941
Show Author Affiliations
O. Kjebon, Royal Institute of Technology (Sweden)
Richard Schatz, Royal Institute of Technology (Sweden)
Sebastian Lourdudoss, Royal Institute of Technology (Sweden)
Stefan Nilsson, Royal Institute of Technology (Sweden)
Bjoern Stalnacke, Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 2684:
High-Speed Semiconductor Laser Sources
Paul A. Morton; Deborah L. Crawford, Editor(s)

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