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Proceedings Paper

Dark-field optical microscopy in semiconductor materials: a typical answerable inverse problem
Author(s): Jean-Pierre Fillard; Paul C. Montgomery; Syamsa Moh Ardisasmita; Pascal Gall-Borrut
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Paper Abstract

From the recent developments in Laser Scanning Tomography it appears that dark field microscopy methods make it possible to observe very small microprecipitates which are bound to grow in the bulk of semi conductor materials or epitaxial layers. Improvements in such investigations rely on reducing the effective "sectioning' thickness of the optical observation in order to be able to measure the axial position of the point sources with submicron precision. This is possible owing to the fact that the recorded individual images of the point sources (considered as Point Spread Functions) are separable diffraction patterns. This communication aims at presenting the first attempt to explore this typical reverse problem of "micro ranging". It will be shown using a series of images from precipitates in Indium Phosphide bulk material that numerical interpolation can lead to the relative position of each particle with a convenient precision. Optical perturbations such as spherical aberration and coma are also to be taken into account if the optical system is not already corrected.

Paper Details

Date Published: 1 November 1990
PDF: 8 pages
Proc. SPIE 1351, Digital Image Synthesis and Inverse Optics, (1 November 1990); doi: 10.1117/12.23630
Show Author Affiliations
Jean-Pierre Fillard, Ctr. d'Electronique de Montpel (France)
Paul C. Montgomery, Ctr. d'Electronique de Montpel (France)
Syamsa Moh Ardisasmita, Ctr. d'Electronique de Montpel (France)
Pascal Gall-Borrut, Ctr. d'Electronique de Montpel (France)

Published in SPIE Proceedings Vol. 1351:
Digital Image Synthesis and Inverse Optics
Arthur F. Gmitro; Paul S. Idell; Ivan J. LaHaie, Editor(s)

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