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Proceedings Paper

Laser demonstration of diode-laser-pumped Nd:Sr5(VO4)3F crystal
Author(s): Shengzhi Zhao; Qingpu Wang; Xingyu Zhang; Lianke Sun; Shaojun Zhang
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Paper Abstract

The absorption spectrum of a new crystal Nd:Sr6(VO4)3F, known as Nd:S-VAP, is measured and its strong absorption peak at 809 nm shows that it can be suitably pumped by laser-diode. By using a laser-diode pump operating at 809 nm, Nd:S-VAP crystal has been successfully lased at 1.065 micrometer. A highest slope efficiency of 43.5% and a lowest laser threshold of only 11 mW have been measured. The theoretical formulas for threshold power and slope efficiency were written, and the theoretical prediction is in agreement with the experimental result.

Paper Details

Date Published: 25 March 1996
PDF: 5 pages
Proc. SPIE 2698, Solid State Lasers V, (25 March 1996); doi: 10.1117/12.236159
Show Author Affiliations
Shengzhi Zhao, Shandong Univ. (China)
Qingpu Wang, Shandong Univ. (China)
Xingyu Zhang, Shandong Univ. (China)
Lianke Sun, Shandong Univ. (China)
Shaojun Zhang, Shandong Univ. (China)

Published in SPIE Proceedings Vol. 2698:
Solid State Lasers V
Richard Scheps, Editor(s)

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