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Proceedings Paper

Study on the highly intelligent uniformity correction and the application for lithography
Author(s): Weilin Cheng; Fang Zhang; Dongliang Lin; Aijun Zeng; Baoxi Yang; Huijie Huang
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Paper Abstract

The uniformity of the illumination field in the scanning direction is an important factor that affects the lithographic overlay accuracy as well as Critical dimension uniformity (CDU). With the improvement of lithography resolution illumination integrated uniformity is also increasing. To improving illumination integrated uniformity, a highly intelligent uniformity correction is introduced, which is used to correct the illumination integrated uniformity by inserting a plurality of independent movable correction plate arrays into the illumination field. In addition, a correction algorithm based on step by step is proposed. The simulation results show that the corrected illumination integrated uniformity is better than 0.3%, which is meeting the requirements of illumination integrated uniformity for 65nm node lithography.

Paper Details

Date Published: 24 July 2018
PDF: 8 pages
Proc. SPIE 10827, Sixth International Conference on Optical and Photonic Engineering (icOPEN 2018), 108272H (24 July 2018); doi: 10.1117/12.2326837
Show Author Affiliations
Weilin Cheng, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Fang Zhang, Shanghai Institue of Optics and Fine Mechanics (China)
Dongliang Lin, Shanghai Institue of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Aijun Zeng, Shanghai Institue of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Baoxi Yang, Shanghai Institue of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Huijie Huang, Shanghai Institue of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10827:
Sixth International Conference on Optical and Photonic Engineering (icOPEN 2018)
Yingjie Yu; Chao Zuo; Kemao Qian, Editor(s)

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