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Proceedings Paper

Silicon photodiodes optimized for the EUV and soft x-ray regions
Author(s): L. Randall Canfield; Jonathan A. Kerner; Raj S. Korde
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Paper Abstract

Available photodiodes are reviewed with attention given to the performance parameters, temporal stability, and appropriateness for narrow bandpass applications and certain photon energies. The configuration of XUV photodiodes for use in the EUV and soft X-ray regions is delineated, and the measured parameters are outlined. The photodiodes have stable efficiencies that vary linearly with photon energy and exceed 1 electron/incident photon for photon energies of at least 10 eV. The silicon photodiodes are found to be suitable for EUV and soft X-ray applications and are stable, very highly efficient, and are unaffected by operation under high gas pressures. The silicon dioxide outer surface can be coated with thin films to develop narrow bandpass applications. The present XUV silicon detectors have active areas of 1 or 3 sq cm and can be used with an instrument for measuring photocurrent without external power supplies.

Paper Details

Date Published: 1 November 1990
PDF: 6 pages
Proc. SPIE 1344, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy, (1 November 1990); doi: 10.1117/12.23265
Show Author Affiliations
L. Randall Canfield, National Institute of Standards and Technology (United States)
Jonathan A. Kerner, National Institute of Standards and Technology (United States)
Raj S. Korde, United Detector Technology (United States)

Published in SPIE Proceedings Vol. 1344:
EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy
Oswald H. W. Siegmund; Hugh S. Hudson, Editor(s)

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