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Proceedings Paper

High TMR dual-MTJ STT-MRAM design with perpendicular magnetic anisotropy (Conference Presentation)
Author(s): Zheng Duan; Sebastian Schafer; Volodymyr Voznyuk; Xueti Tang; Gen Feng; Donkoun Lee; Lifeng Zheng; Dmytro Apalkov; Robert Beach; Vladimir Nikitin

Paper Abstract

STT-MRAM cell design with dual magnetic tunnel junctions (D-MTJ) is a novel design that show a factor of ~2 in switching performance compared to conventional MRAM design. However, the disadvantage is D-MTJ tends to show lower TMR. In this presentation, we demonstrate it's possible to achieve high TMR D-MTJ cell design without compromising its performance gain. We accomplished this by thinning down the secondary MgO barrier. We observe that when thinning down the secondary barrier, the device level TMR reaches a level close to conventional MRAM design of the same free layer while still preserving its high switching performance

Paper Details

Date Published: 18 September 2018
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Proc. SPIE 10732, Spintronics XI, 107321K (18 September 2018); doi: 10.1117/12.2322798
Show Author Affiliations
Zheng Duan, SAMSUNG Semiconductor, Inc. (United States)
Sebastian Schafer, SAMSUNG Semiconductor, Inc. (United States)
Volodymyr Voznyuk, SAMSUNG Semiconductor, Inc. (United States)
Xueti Tang, SAMSUNG Semiconductor, Inc. (United States)
Gen Feng, SAMSUNG Semiconductor, Inc. (United States)
Donkoun Lee, SAMSUNG Semiconductor, Inc. (United States)
Lifeng Zheng, SAMSUNG Semiconductor, Inc. (United States)
Dmytro Apalkov, SAMSUNG Semiconductor, Inc. (United States)
Robert Beach, SAMSUNG Semiconductor, Inc. (United States)
Vladimir Nikitin, SAMSUNG Semiconductor, Inc. (United States)


Published in SPIE Proceedings Vol. 10732:
Spintronics XI
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

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