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Proceedings Paper

Room temperature excitonic absorption in CdxZn1-xTe/ZnTe multiple quantum wells: physics and applications
Author(s): Anthony M. Johnson
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Paper Abstract

Room temperature excitonic absorption peaks have been difficult to observe in II-VI semiconductors, which has been attributed to strong exciton-phonon interactions. The first well-defined room teaperature excitonic absorption peaks, in II-VI semiconductors, were aeasured in CdxZn1-xTe/ZnTe multiple quantum wells (MQWs) grown by Rolecular bean epitaxy on GaAs substrates. Transmission, photoluinescence (PL), PL excitation and resonant Raman scattering experiRents reveal the important contributions to the exciton linewidth. The strong room temperature excitonic absorption was found to saturate at an incident optical intensity considerably higher than for III-V HQW5. The first visible wavelength waveguide intensity modulator based on the quantumconfined Stark effect was recently demonstrated. Featosecond time resolved measurements of room temperature exciton ionization by longitudinal optic (LO) phonon scattering, has resulted in an exciton ionization time of ? 125 fsec.

Paper Details

Date Published: 1 February 1992
Proc. SPIE 1599, Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine, (1 February 1992); doi: 10.1117/12.2322279
Show Author Affiliations
Anthony M. Johnson, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1599:
Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine

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