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Proceedings Paper

Reactive laser ablation deposition of C-N films
Author(s): Gilberto Leggieri; Armando Luches; Alessio Perrone; S. Acquaviva; Rodica Alexandrescu; Ion N. Mihailescu; Joseph Zemek; Paolo Mengucci
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Paper Abstract

We report a study of the characteristics of thin films deposited at room temperature on Si and KBr substrates by XeCl laser ablation of graphite in low pressure (0.25-2.5 mbar) nitrogen and ammonia atmospheres. Very hard films, with a very high electrical resistivity were obtained. The deposition rates decrease with increasing ambient pressure. N/C atomic ratios up to 0.6 were calculated from backscattering measurements. Different diagnostic techniques (XPS, IR absorption spectroscopy, etc.) demonstrate the formation of carbon nitride with a prevalent graphite-like structure. Films deposited in NH3 are thinner and present a lower quantity of N atoms bound to C atoms than films deposited in N2 at the same ambient pressure.

Paper Details

Date Published: 11 March 1996
PDF: 14 pages
Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); doi: 10.1117/12.232208
Show Author Affiliations
Gilberto Leggieri, Univ. di Lecce (Italy)
Armando Luches, Univ. di Lecce (Italy)
Alessio Perrone, Univ. di Lecce (Italy)
S. Acquaviva, Univ. di Lecce (Italy)
Rodica Alexandrescu, Institute of Atomic Physics (Romania)
Ion N. Mihailescu, Institute of Atomic Physics (Romania)
Joseph Zemek, Institute of Physics (Czech Republic)
Paolo Mengucci, Univ. di Ancona (Italy)

Published in SPIE Proceedings Vol. 2777:
ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics
Alexander M. Prokhorov; Vladimir I. Pustovoy, Editor(s)

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