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Proceedings Paper

Inverted cylindrical magnetron sputtering for HTSC thin film growth
Author(s): Jochen Geerk
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Paper Abstract

The Inverted Cylindrical Magnetron Sputtering (ICM) is a reliable and reproducible method for the production of HTSC thin films. This allows systematic studies of film growth as a function of various deposition parameters including film thickness, substrate material or buffer layers. We report the growth conditions and growth quality of ,,l-2-3" films of different orientation with special emphasis on a-axis films which may be of interest for applications if 3-dimensional patterning is attempted. Substrate orientation and substrate temperature are the essential parameters controlling the growth orientation. High quality buffer layers (FWHM mosaic spread <0.2°, xmin,<5% in channeling experiment) of Zr(Y)O2 could be deposited on R-plane sapphire. Critical current densities near 3 X 106 A/cm2 at 77 K could be achieved for the 1-2-3 films deposited on these buffer layers. Finally we report results of in situ BiSrCaCuO thin film deposition revealing first signs of channeling behaviour (xmin ≈60%) indicating towards epitaxial growth.

Paper Details

Date Published: 1 March 1992
Proc. SPIE 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II, (1 March 1992); doi: 10.1117/12.2321831
Show Author Affiliations
Jochen Geerk, Institut für Nukleare Festkorperphysik (Germany)

Published in SPIE Proceedings Vol. 1597:
Progress in High-Temperature Superconducting Transistors and Other Devices II

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