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Proceedings Paper

Improved thermal properties of etched-well surface-emitting lasers with highly-doped P-cladding
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Paper Abstract

A comprehensive, self-consistent thermal-electrical model of etched-well GaAs/A1GaAs vertical-cavity surface-emitting lasers (VCSEL5) is utilized to study thermal properties of cw operating devices. Various configurations of doping concentration in both cladding layers are considered. It is shown that significant improvement in controlling excessive heating of VCSELs can be achieved by relatively straightforward technological means, provided thermal behavior of the device is well understood. In particular, by increasing the doping level in the P-AlGaAs layer, the active region temperature can be reduced dramatically. The N-AlGaAs doping level has a decisive influence on the homogeneity of current injection into the active region.

Paper Details

Date Published: 1 December 1992
Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); doi: 10.1117/12.2321814
Show Author Affiliations
Wlodzimierz Nakwaski, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 1582:
Integrated Optoelectronics for Communication and Processing
C.-S. Hong, Editor(s)

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