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Proceedings Paper

Fully self-consistent model of an integratable buried-heterostructure InP/InGaAsP laser diode
Author(s): P. C. R. Gurney
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Paper Abstract

A self-consistent model of a buried heterostructure semiconductor injection laser is presented which simulates the static electrical and optical properties of buried ridge and constricted mesa lasers. It includes the effects of the superposition of all lasing modes. Results have been obtained showing that high p-type doping of the cap region has a beneficial effect on leakage current and the lateral optical field, especially at high output powers, leading to increased niodulatioii bandwidth.

Paper Details

Date Published: 1 December 1992
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Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); doi: 10.1117/12.2321808
Show Author Affiliations
P. C. R. Gurney, Univ. of Bath (United Kingdom)


Published in SPIE Proceedings Vol. 1582:
Integrated Optoelectronics for Communication and Processing
C.-S. Hong, Editor(s)

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