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Proceedings Paper

Wideband impedance-matched integrated optoelectronic transmitter
Author(s): D. Yap
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Paper Abstract

A GaAs/GaAlAsintegrated optoelectronic transmitter has been developed for wideband operation at 1 to4 GHz. This transmitter combines a GaAS/GaA1AS single-quantum-well (SQW) ridge-waveguide laserwith a GaAs MESFET driver circuit. The single stage driver circuit has an rf gain of 9 dB and is impedance matched to both the low resistance laserload and the 50 W microwave input by using reactive MMIC components. This design results in a nearly flat frequency response in the band of interest A combination of both laser and MMIC fabrication processes has been used to realize the transmitter in the vertically integrated MOVPE-grown material.

Paper Details

Date Published: 1 December 1992
Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); doi: 10.1117/12.2321805
Show Author Affiliations
D. Yap, Hughes Research Labs. (United States)

Published in SPIE Proceedings Vol. 1582:
Integrated Optoelectronics for Communication and Processing
C.-S. Hong, Editor(s)

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