
Proceedings Paper
Resist schemes for soft x-ray lithographyFormat | Member Price | Non-Member Price |
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Paper Abstract
Soft x-ray projection lithography in the 60-400 A wavelength range has recently demonstrated the
ability to print 0.1 im resolution features in thin single layer and thicker trilayer resist films.7'8
However, for use on topographic substrates thicker resist layers with planarizing properties probably
will be required. This paper analyzes resist absorption and planarization aspects of soft x-ray
projection lithography, couples them with projections of potential multilayer and other types of
reflectors and reviews resist approaches which are compatible with them. Primarily due to absorption
issues and the strong processing tendency to retain a single layer resist technology, dry-developed
resist schemes incorporating planarization are favored. Results for a variety of such schemes
developed for deep-UV use are surveyed and recent results for soft x-ray exposure at 140 A are
discussed.
Paper Details
Date Published: 1 February 1991
PDF: 16 pages
Proc. SPIE 1343, X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography, (1 February 1991); doi: 10.1117/12.23198
Published in SPIE Proceedings Vol. 1343:
X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography
PDF: 16 pages
Proc. SPIE 1343, X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography, (1 February 1991); doi: 10.1117/12.23198
Show Author Affiliations
Gary N. Taylor, AT&T Bell Labs. (United States)
Richard S. Hutton, AT&T Bell Labs. (United States)
Richard S. Hutton, AT&T Bell Labs. (United States)
David L. Windt, AT&T Bell Labs. (United States)
William M. Mansfield, AT&T Bell Labs. (United States)
William M. Mansfield, AT&T Bell Labs. (United States)
Published in SPIE Proceedings Vol. 1343:
X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography
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