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Proceedings Paper

Resist schemes for soft x-ray lithography
Author(s): Gary N. Taylor; Richard S. Hutton; David L. Windt; William M. Mansfield
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Paper Abstract

Soft x-ray projection lithography in the 60-400 A wavelength range has recently demonstrated the ability to print 0.1 im resolution features in thin single layer and thicker trilayer resist films.7'8 However, for use on topographic substrates thicker resist layers with planarizing properties probably will be required. This paper analyzes resist absorption and planarization aspects of soft x-ray projection lithography, couples them with projections of potential multilayer and other types of reflectors and reviews resist approaches which are compatible with them. Primarily due to absorption issues and the strong processing tendency to retain a single layer resist technology, dry-developed resist schemes incorporating planarization are favored. Results for a variety of such schemes developed for deep-UV use are surveyed and recent results for soft x-ray exposure at 140 A are discussed.

Paper Details

Date Published: 1 February 1991
PDF: 16 pages
Proc. SPIE 1343, X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography, (1 February 1991); doi: 10.1117/12.23198
Show Author Affiliations
Gary N. Taylor, AT&T Bell Labs. (United States)
Richard S. Hutton, AT&T Bell Labs. (United States)
David L. Windt, AT&T Bell Labs. (United States)
William M. Mansfield, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1343:
X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography

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