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XUV free-electron laser-based projection lithography systems
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Paper Abstract

Free-electron laser sources, driven by ri-linear accelerators, have the potential to operate in the extreme ultraviolet (XUV) spectral range with more thansutficient average power for high-volume projection lithography. For XUV wavelengths from 100 nm to 4 nm, such sources will enable the resolution limit of optical projection lithography to be extended from 0.25 pm to 0.05 im and with an adequate total depth of focus (1 to 2 jtm). Recent developments of a photoinjector of very bright electron beams, high-precision magnetic undulators, and ring-resonator cavities raise our confidence that FEL operation below I 00 nm is ready for prototype demonstration. We address the motivation for an XUV FEL source for commercial microcircuit production and its integration into a lithographic system, including reflecting reduction masks, reflecting XUV projection optics and alignment systems, and surface-imaging photoresists.

Paper Details

Date Published: 1 February 1991
PDF: 15 pages
Proc. SPIE 1343, X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography, (1 February 1991); doi: 10.1117/12.23194
Show Author Affiliations
Brian Emerson Newnam, Los Alamos National Lab. (United States)

Published in SPIE Proceedings Vol. 1343:
X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography

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