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Proceedings Paper

A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications
Author(s): Yu Yan; Tomas Bryllert; Vessen Vassilev; Sten E. Gunnarsson; Herbert Zirath
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Paper Abstract

A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transceiver operates as an amplifier for transmitting and simultaneously as a fundamental mixer for receiving. In a measured frequency range of 120-160 GHz, a typical output power of 0 dBm is obtained with an input power of +3 dBm. As a fundamental mixer, a conversion gain of -9 dB is obtained at 130 GHz LO, and a noise figure of 19 dB is achieved. The transceiver is successfully demonstrated as a FMCW radar front-end for distance measurement. With a chirp rate of 1.6×1012 Hz/s and a bandwidth of 14.4 GHz, a range resolution of 2.8 cm is demonstrated, and transmission test is shown on different objects.

Paper Details

Date Published: 5 October 2018
PDF: 9 pages
Proc. SPIE 10800, Millimetre Wave and Terahertz Sensors and Technology XI, 108000I (5 October 2018); doi: 10.1117/12.2318791
Show Author Affiliations
Yu Yan, Chalmers Univ. of Technology (Sweden)
Tomas Bryllert, Chalmers Univ. of Technology (Sweden)
Vessen Vassilev, Chalmers Univ. of Technology (Sweden)
Sten E. Gunnarsson, Chalmers Univ. of Technology (Sweden)
Herbert Zirath, Chalmers Univ. of Technology (Sweden)

Published in SPIE Proceedings Vol. 10800:
Millimetre Wave and Terahertz Sensors and Technology XI
Neil A. Salmon; Frank Gumbmann, Editor(s)

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