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Proceedings Paper

Toward a hybrid integration of a 4-wavelength InGaAsP laser array on the slotted silicon waveguide
Author(s): Xing Dai; Hongyan Yu; Pengfei Wang; Weixi Chen; Jiaoqing Pan
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Paper Abstract

A room temperature four-channel hybrid laser array was realized by using selective area metal bonding method, which is able to evanescently couple the light from InGaAsP multi-quantum well laser diodes into the slotted silicon waveguide. The output wavelength of this hybrid laser can be accurately tuned to 1538.6 nm, 1540.5 nm 1544.9 nm and 1550 nm through controlling the waveguide width of each channel. A typical threshold current of one channel was of 20 mA and the corresponding side-mode suppression ratio was of 20 dB. Moreover, one advantage of such slotted structures is the ease in fabrication, thus making this type of devices as a promising candidate for wavelength division multiplex in future optical communication system.

Paper Details

Date Published: 21 May 2018
PDF: 7 pages
Proc. SPIE 10686, Silicon Photonics: From Fundamental Research to Manufacturing, 106860L (21 May 2018); doi: 10.1117/12.2317999
Show Author Affiliations
Xing Dai, Tyndall National Institute (Ireland)
Hongyan Yu, Institute of Semiconductors (China)
Pengfei Wang, Institute of Semiconductors (China)
Weixi Chen, Peking Univ. (China)
Jiaoqing Pan, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 10686:
Silicon Photonics: From Fundamental Research to Manufacturing
Roel G. Baets; Peter O'Brien; Laurent Vivien, Editor(s)

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