Share Email Print
cover

Proceedings Paper

GaN HEMT power amplifier for radar waveforms
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The paper presents the amplifier for application in an active electronically scanned array (AESA). For design purposes both time- and frequency domain simulations were carried out. The developed amplifier achieved more than 9W of output power at a maximum efficiency of 57% for 9.5 GHz and small-signal gain |S21|>11dB over 9-10 GHz frequency range. Furthermore, the potential of Polish GaN HEMT technology based on domestic, semi-insulating, bulk GaN substrate fabricated by Ammono.

Paper Details

Date Published: 19 April 2018
PDF: 6 pages
Proc. SPIE 10715, 2017 Radioelectronic Systems Conference, 107150N (19 April 2018); doi: 10.1117/12.2317908
Show Author Affiliations
Dawid Kuchta, Warsaw Univ. of Technology (Poland)
Wojciech Wojtasiak, Warsaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10715:
2017 Radioelectronic Systems Conference
Adam Kawalec; ANDRZEJ WITCZAK, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray