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Proceedings Paper

Kyoto's event-driven x-ray astronomy SOI pixel sensor for the FORCE mission
Author(s): Takeshi G. Tsuru; Hideki Hayashi; Katsuhiro Tachibana; Soudai Harada; Hiroyuki Uchida; Takaaki Tanaka; Yasuo Arai; Ikuo Kurachi; Koji Mori; Ayaki Takeda; Yusuke Nishioka; Nobuaki Takebayashi; Shoma Yokoyama; Kohei Fukuda; Takayoshi Kohmura; Kouichi Hagino; Kenji Ohno; Kohsuke Negishi; Keigo Yarita; Shoji Kawahito; Keiichiro Kagawa; Keita Yasutomi; Sumeet Shrestha; Shunta Nakanishi; Hiroki Kamehama; Hideaki Matsumura
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Paper Abstract

We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution (< 15 arcsec), with which we can achieve about ten times higher sensitivity in comparison to the previous missions above 10 keV. Immediate readout of only those pixels hit by an X-ray is available by an event trigger output function implemented in each pixel with the time resolution higher than 10 µsec (Event-Driven readout mode). It allows us to do fast timing observation and also reduces non-X-ray background dominating at a high X-ray energy band above 5{10 keV by adopting an anti-coincidence technique. In this paper, we introduce our latest results from the developments of the XRPIXs. (1) We successfully developed a 3-side buttable back-side illumination device with an imaging area size of 21.9 mm x 13.8 mm and an pixel size of 36 µm x 36 µm. The X-ray throughput with the device reaches higher than 0.57 kHz in the Event-Driven readout mode. (2) We developed a device using the double SOI structure and found that the structure improves the spectral performance in the Event-Driven readout mode by suppressing the capacitive coupling interference between the sensor and circuit layers. (3) We also developed a new device equipped with the Pinned Depleted Diode structure and confirmed that the structure reduces the dark current generated at the interface region between the sensor and the SiO2 insulator layers. The device shows an energy resolution of 216 eV in FWHM at 6.4 keV in the Event-Driven readout mode. .

Paper Details

Date Published: 1 August 2018
PDF: 11 pages
Proc. SPIE 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII, 107090H (1 August 2018); doi: 10.1117/12.2312098
Show Author Affiliations
Takeshi G. Tsuru, Kyoto Univ. (Japan)
Hideki Hayashi, Kyoto Univ. (Japan)
Katsuhiro Tachibana, Kyoto Univ. (Japan)
Soudai Harada, Kyoto Univ. (Japan)
Hiroyuki Uchida, Kyoto Univ. (Japan)
Takaaki Tanaka, Kyoto Univ. (Japan)
Yasuo Arai, High Energy Accelerator Research Organization, KEK (Japan)
Ikuo Kurachi, High Energy Accelerator Research Organization, KEK (Japan)
Koji Mori, Univ. of Miyazaki (Japan)
Ayaki Takeda, Univ. of Miyazaki (Japan)
Yusuke Nishioka, Univ. of Miyazaki (Japan)
Nobuaki Takebayashi, Univ. of Miyazaki (Japan)
Shoma Yokoyama, Univ. of Miyazaki (Japan)
Kohei Fukuda, Univ. of Miyazaki (Japan)
Takayoshi Kohmura, Tokyo Univ. of Science (Japan)
Kouichi Hagino, Tokyo Univ. of Science (Japan)
Kenji Ohno, Tokyo Univ. of Science (Japan)
Kohsuke Negishi, Tokyo Univ. of Science (Japan)
Keigo Yarita, Tokyo Univ. of Science (Japan)
Shoji Kawahito, Shizuoka Univ. (Japan)
Keiichiro Kagawa, Shizuoka Univ. (Japan)
Keita Yasutomi, Shizuoka Univ. (Japan)
Sumeet Shrestha, Shizuoka Univ. (Japan)
Shunta Nakanishi, Shizuoka Univ. (Japan)
Hiroki Kamehama, Okinawa National College of Technology (Japan)
Hideaki Matsumura, The Univ. of Tokyo (Japan)

Published in SPIE Proceedings Vol. 10709:
High Energy, Optical, and Infrared Detectors for Astronomy VIII
Andrew D. Holland; James Beletic, Editor(s)

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