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Proceedings Paper

Pair creation energy and Fano factor of silicon measured at 185 K using Fe55 x-rays
Author(s): I. V. Kotov; H. Neal; P. O'Connor
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Paper Abstract

The pair creation energy,ω and the Fano factor of silicon were measured using a CCD sensor and X-rays from an 55Fe source. The measurements were performed at a sensor temperature of 185K. The pair creation energy was measured for X-rays in the 1.7-6.5 keV range. The measured pair creation energy is ω = (3:650 ± 0:009) eV at the Mn Kα line energy. The Fano factor at this energy is F = 0:128±0:001. The agreement with theory and previous measurements is satisfactory. The system gain was obtained from at field exposures using the Poisson distribution properties. These results and the details of our measurement procedure are presented below.

Paper Details

Date Published: 6 July 2018
PDF: 11 pages
Proc. SPIE 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII, 107091E (6 July 2018); doi: 10.1117/12.2310131
Show Author Affiliations
I. V. Kotov, Brookhaven National Lab. (United States)
H. Neal, SLAC (United States)
P. O'Connor, Brookhaven National Lab. (United States)

Published in SPIE Proceedings Vol. 10709:
High Energy, Optical, and Infrared Detectors for Astronomy VIII
Andrew D. Holland; James Beletic, Editor(s)

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