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Proceedings Paper

Testing system of multiplying electron gain for electron bombarded semiconductor
Author(s): Jiqiang Zhou; Haibo Fan; Hongcang Cheng; Yining Mu; De Song
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Paper Abstract

Electron bombardment of semiconductor gain as the main characteristics of electronic bombardment devices affect the overall performance of the device. According to weak signal detection theory, developed a set of multiplying electron gain test system including pre-amplifier circuit and FPGA-based high-speed signal acquisition system. The tinned semiconductor sample was tested experimentally, for the relationship between gain performance and incident electron energy. The experimental with incident electron energy(1500-2000eV) bombardment 65μm of semiconductor sample, results show the multiply electron gain with the increase of the incident electron energy, which will provide theoretical basis and technical support to further manufacture of high performance electron bombarded semiconductor sensors.

Paper Details

Date Published: 20 February 2018
PDF: 6 pages
Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106970T (20 February 2018); doi: 10.1117/12.2309747
Show Author Affiliations
Jiqiang Zhou, Changchun Univ. of Science and Technology (China)
Haibo Fan, Changchun Univ. of Science and Technology (China)
Hongcang Cheng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Yining Mu, Changchun Univ. of Science and Technology (China)
De Song, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10697:
Fourth Seminar on Novel Optoelectronic Detection Technology and Application
Weiqi Jin; Ye Li, Editor(s)

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