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Proceedings Paper

Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching
Author(s): Wen-kui Lin; Chun-hong Zeng; Yu-hua Sun; Xuan Zhang; Zhe Li; Tao-tao Yang; Tao Ju; Bao-shun Zhang
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Paper Abstract

Additional scattering of electrons in the complex MOSFET channel caused by off-cut angle of (0001) 4H-SiC wafer, makes accurate crystal face acquisition much desired. Molten KOH was used to etch the circular grooves on the SiC wafer surface in muffle furnace, and hexagonal grooves with SiC crystal symmetry were obtained. Average etching rates at 500°C along <;11-20> and <1-100> direction were about 4.826 um/min and 4.112 um/min, respectively,with a etching anisotropy ratio of 1.18. The m face was obtained by controlling the etching time and Si face was obtained by selfstopping effect. The method we developed in this paper has potential applications in the accurate crystal face acquisition of (0001) 4H-SiC epi-wafer, and the preparation of structures based on 4H-SiC.

Paper Details

Date Published: 20 February 2018
PDF: 5 pages
Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974E (20 February 2018); doi: 10.1117/12.2307312
Show Author Affiliations
Wen-kui Lin, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Chun-hong Zeng, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Yu-hua Sun, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Xuan Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Zhe Li, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Univ. of Chinese Academy of Sciences (China)
Tao-tao Yang, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Beijing Univ. of Technology (China)
Tao Ju, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Bao-shun Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics (China)


Published in SPIE Proceedings Vol. 10697:
Fourth Seminar on Novel Optoelectronic Detection Technology and Application
Weiqi Jin; Ye Li, Editor(s)

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