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Proceedings Paper

Reduce the efficiency droop by p-doped quantum well barriers in InGaN multiple quantum well
Author(s): Xioadong Yang; Shichen Su; Xiaoxia Wen; Ting Mei; Jin Guo
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Paper Abstract

InGaN LEDs with different doped type and doping concentration of quantum well barriers are theoretically studied and compared by using the APSYS simulation program. Comparing with the undoped and the n-doped, the good efficiency profile is obtained when the quantum well barrier is p-doped. As the concentration of p-doped increases, the hole concentration in quantum well increases markedly. The optical performance; radiative recombination rate are improved and electron leakage is reduced.

Paper Details

Date Published: 20 February 2018
PDF: 7 pages
Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974C (20 February 2018); doi: 10.1117/12.2307292
Show Author Affiliations
Xioadong Yang, China Electronics Technology Group Corp. (China)
Shichen Su, South China Normal Univ. (China)
Xiaoxia Wen, South China Normal Univ. (China)
Ting Mei, South China Normal Univ. (China)
Jin Guo, China Electronics Technology Group Corp. (China)


Published in SPIE Proceedings Vol. 10697:
Fourth Seminar on Novel Optoelectronic Detection Technology and Application
Weiqi Jin; Ye Li, Editor(s)

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