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Proceedings Paper

Influence of longitudinal mode lock by external grating on filamentation and catastrophic optical mirror damage (COMD) of 970 nm broad area single emitters
Author(s): Kun Zhou; Hao Tan; Weichuan Du; Yi Li; Huicheng Meng; Huaijin Ren; Jue Peng; Songxin Gao; Yi Ma; Ruijun Li; Chun Tang; Jianping Liu; Deyao Li; Hui Yang
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Paper Abstract

For many applications, laser diodes with very narrow and stable emission wavelength are needed. The realization of mode selection by an external cavity system with a grating is widely used. The influence of longitudinal mode selection by external grating on the filamentation and catastrophic optical mirror damage (COMD) of 970 nm broad area single emitters is studied in this paper. The emitters worked at three configurations: free running, with 10% mirror feedback (mirror lasers), and 10% grating feedback (grating lasers). The grating lasers showed very short lifetime caused by COMD, while the free-running lasers and mirror lasers show no power degradation. The COMD was confirmed by optical microscope showing cracking and melting of the optical antireflective (AR) coatings. By observing the near-field pattern of the three lasers, the COMD of the grating lasers was attributed to the pronounced filamentation induced by the grating feedback. What’s more, the filamentations vary when the locked wavelength change which indicates that the carrier dynamics thus the refractive index profile is very sensitive to the locked lasing wavelength.

Paper Details

Date Published: 20 February 2018
PDF: 6 pages
Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974B (20 February 2018); doi: 10.1117/12.2307289
Show Author Affiliations
Kun Zhou, Institute of Applied Electronics, CAEP (China)
Hao Tan, Institute of Applied Electronics, CAEP (China)
Weichuan Du, Institute of Applied Electronics, CAEP (China)
Yi Li, Institute of Applied Electronics, CAEP (China)
Huicheng Meng, Institute of Applied Electronics, CAEP (China)
Huaijin Ren, Institute of Applied Electronics, CAEP (China)
Jue Peng, Institute of Applied Electronics, CAEP (China)
Songxin Gao, Institute of Applied Electronics, CAEP (China)
Yi Ma, Institute of Applied Electronics, CAEP (China)
Ruijun Li, Institute of Applied Electronics, CAEP (China)
Chun Tang, Institute of Applied Electronics, CAEP (China)
Jianping Liu, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Deyao Li, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Hui Yang, Suzhou Institute of Nano-Tech and Nano-Bionics (China)


Published in SPIE Proceedings Vol. 10697:
Fourth Seminar on Novel Optoelectronic Detection Technology and Application
Weiqi Jin; Ye Li, Editor(s)

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