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Proceedings Paper

Evaluation of a far-infrared Ge:Ga multiplexed detector array
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Paper Abstract

The performance of a multielement Ge:Ga linear array under low-background conditions is investigated. On-focal plane switching is accomplished by MOSFET switches and the integrated charge is made available through MOSFET source followers. The tests were conducted at 106 microns and the radiation on the detectors was confined to a spectral window 1.25 microns wide using a stack of cold filters. At 4.2 K, the responsivity was measured to be nominally 584 A/W, and the NEP was 1.0 x 10 exp -16 W/sq rt Hz. A detailed description of the test setup and the procedure is presented.

Paper Details

Date Published: 1 November 1990
PDF: 12 pages
Proc. SPIE 1340, Cryogenic Optical Systems and Instruments IV, (1 November 1990); doi: 10.1117/12.23045
Show Author Affiliations
Jam Farhoomand, Sterling Federal Systems, Inc. (United States)
Craig R. McCreight, NASA/Ames Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1340:
Cryogenic Optical Systems and Instruments IV
Ramsey K. Melugin; Gerald R. Pruitt, Editor(s)

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