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Proceedings Paper

Performance comparison of 1300-nm semiconductor optical amplifiers with bulk and MQW active layers
Author(s): Yet Zen Liu; Jin Chen; J. T. Zhu; Paul K. L. Yu
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Paper Abstract

Comparable gain can be obtained in semiconductor optical amplifiers (SOAs) with either bulk or strained-layer multiple quantum well (MQW) active layer. Their polarization dependence and saturation power are affected by strain and structure designs. In this study, SOAs with compressively strained MQWs have exhibited highest gain and saturation power, while buried waveguide SOAs with large optical cavity have lower polarization sensitivity than the ridge waveguide SOAs.

Paper Details

Date Published: 15 January 1996
PDF: 7 pages
Proc. SPIE 2610, Laser Diode Chip and Packaging Technology, (15 January 1996); doi: 10.1117/12.230073
Show Author Affiliations
Yet Zen Liu, Fermionics Corp. (United States)
Jin Chen, Fermionics Corp. (United States)
J. T. Zhu, Univ. of California/San Diego (United States)
Paul K. L. Yu, Univ. of California/San Diego (United States)

Published in SPIE Proceedings Vol. 2610:
Laser Diode Chip and Packaging Technology
Pei Chuang Chen; Tomas D. Milster, Editor(s)

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