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Proceedings Paper

EUV contact-hole local CD uniformity optimization for DRAM storage node application
Author(s): Mijung Lim; Chang-Moon Lim; Chang-Nam Ahn; Daniel Park; Anita Fumar-Pici; Nak Seong
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Paper Abstract

LCDU (Local Critical Dimension Uniformity) is one of the biggest challenges in EUV lithography as well as throughput. High contrast illumination, so called, leaf hexapole illumination is proposed for staggered contact-hole array pattern. Leaf hexapole illumination shows much better LCDU compared with traditional hexapole illumination which has been used in DUV lithography so far. Stochastic noise model[1] which was developed based on the particle nature of photon is updated to supplement a missing term. Model prediction is well matched with experimental results in wide range of wafer CD and mask CD. Further optimization of LCDU and/or dose-to-size can be predicted through mask CD optimization. By using illumination optimization and mask CD optimization technique, EUV single exposure process can be applied below D1z node or beyond.

Paper Details

Date Published: 1 May 2018
PDF: 8 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830X (1 May 2018); doi: 10.1117/12.2299322
Show Author Affiliations
Mijung Lim, SK Hynix, Inc. (Korea, Republic of)
Chang-Moon Lim, SK Hynix, Inc. (Korea, Republic of)
Chang-Nam Ahn, ASML Korea Co., Ltd. (Korea, Republic of)
Daniel Park, ASML Korea Co., Ltd. (Korea, Republic of)
Anita Fumar-Pici, ASML US, Inc. (United States)
Nak Seong, ASML US, Inc. (United States)

Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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