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Proceedings Paper

Modification of the resolution limits of the photolithographic process due to nonlinear optical propagation effects in the resist layers
Author(s): A. Erdmann
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Paper Abstract

The basic limitations of optical lithography are characterized by the minimum resolvable feature size dmin = k1λ/NA and the depth of focus dfoc = k2λ/NA2, where λ is the wave- length of light and NA the numerical aperture of the projection system. The parameters k1 and k2 depend on the imaging technology. Typical production values are k1 ≥ 0.7 and 1 ≤ k2 ≤ 2. The upper formulas are commonly used for the evaluation of the imaging process in air. The projection of the image into optically linear resists only scales these formulas according to its refractive index.

Paper Details

Date Published: 1 September 1996
PDF: 2 pages
Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 277806 (1 September 1996); doi: 10.1117/12.2298888
Show Author Affiliations
A. Erdmann, Fraunhofer-Institut for Silicon Technology (Germany)


Published in SPIE Proceedings Vol. 2778:
17th Congress of the International Commission for Optics: Optics for Science and New Technology
Joon-Sung Chang; Jai-Hyung Lee; ChangHee Nam, Editor(s)

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