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Proceedings Paper

Self-aligned block and fully self-aligned via for iN5 metal 2 self-aligned quadruple patterning
Author(s): Benjamin Vincent; Joern-Holger Franke; Aurelie Juncker; Frederic Lazzarino; Gayle Murdoch; Sandip Halder; Joseph Ervin
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Paper Abstract

This paper assesses Self-Aligned Block (SAB) and Fully Self-Aligned Via (FSAV) approaches to patterning using a iN5 (imec node 5 nm) vehicle and Metal 2 Self-Aligned Quadruple Patterning. We analyze SAB printability in the lithography process using process optimization, and demonstrate the effect of SAB on patterning yield for a (8 M2 lines x 6 M1 lines x 6 Via) structure. We show that FSAV, compared to standard Via patterning, has no beneficial impact but prevents dielectric breakdown between two adjacent M1 lines.

Paper Details

Date Published: 19 March 2018
PDF: 11 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830W (19 March 2018); doi: 10.1117/12.2298761
Show Author Affiliations
Benjamin Vincent, Coventor (France)
Joern-Holger Franke, IMEC (Belgium)
Aurelie Juncker, Coventor (France)
Frederic Lazzarino, IMEC (Belgium)
Gayle Murdoch, IMEC (Belgium)
Sandip Halder, IMEC (Belgium)
Joseph Ervin, Coventor (France)


Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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