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Proceedings Paper

Simultaneous consideration of conductor thickness and semiconductor substrate in finlines
Author(s): Humberto Cesar Chaves Fernandes
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Paper Abstract

The theory and numerical results to the effective dielectric constant and attenuation constant of bilateral finline structure, considering the conductoe thickness and semiconductor substrate is presented. The full wave analysis of the Transverse Transmission line methos in Fourier transform domain FTD is used. The numerical results are computed with a program developed in Fortran 77 language.

Paper Details

Date Published: 30 August 1993
PDF: 2 pages
Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 210455 (30 August 1993); doi: 10.1117/12.2298617
Show Author Affiliations
Humberto Cesar Chaves Fernandes, Federal Univ. of Rio Grande do Norte (Brazil)

Published in SPIE Proceedings Vol. 2104:
18th International Conference on Infrared and Millimeter Waves
James R. Birch; Terence J. Parker, Editor(s)

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