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Proceedings Paper

Far infrared and Raman study of the effect of growth on the interfaces of a symmetric GaAs/AlAs superlattices
Author(s): A. Z. Mamun
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Paper Abstract

Phonon confinement in a selection of asymmetric 4-layer GaAs/AlAs superlattice structures grown by molec- ular beam epitaxy has been studied by polarised far infrared oblique incidence and attenuated total reflection(ATR) spectroscopy and Raman spectroscopy. The results enable measurements to he made of the interfacebroadening parameters WE of each interface i. The interface roughness parameter W of a layer of averagethickness n monolayers is described by the expression W2 = ann3 /(an + n,), with a = 1 and n3 = 2 and 5for GaAs and AlAs repectively.

Paper Details

Date Published: 30 August 1993
PDF: 2 pages
Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21044I (30 August 1993); doi: 10.1117/12.2298594
Show Author Affiliations
A. Z. Mamun, Univ. of Essex (United Kingdom)

Published in SPIE Proceedings Vol. 2104:
18th International Conference on Infrared and Millimeter Waves
James R. Birch; Terence J. Parker, Editor(s)

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