We present the electrical behavior of an integrated waveguide/photodetector based on the absorption of the evanescent optical field in an absorbing layer, deposited on the top of the waveguiding layer. We establish the expression of the electron-hole pair generation rate, for such a device. Then, we apply this result to the calculation of the dynamic quantum efficiency of an integrated waveguide/PIN-photodiode. The static and dynamic behaviors of GaInAs PIN-photodiodes monolithically integrated on a classical n/nt InP homostructure waveguide or on a GaInAsP/InP heterostructure waveguide are discussed and optimized structures are pointed out.

Date Published: 1 November 1990
PDF: 12 pages
Proc. SPIE 1338, Optoelectronic Devices and Applications, (1 November 1990); doi: 10.1117/12.22981

Published in SPIE Proceedings Vol. 1338:
Optoelectronic Devices and Applications
Sriram Sriram, Editor(s)