Share Email Print
cover

Proceedings Paper

Study on the dark-field illumination for near-field microscope using anamorphic optics to inspect defects on semiconductor wafers
Author(s): Woojun Han; Sunseok Yang; Hangyeong Oh; Yoongi Lee; Jaisoon Kim
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

General approaches to realize higher sensitivity in optical inspection system are using shorter wavelength including UV and higher NA for objective lens. Extreme performances of imaging and illumination systems in a situation of wellmatched to each other are inevitable for the further effort on an effective optical detection of fine defects in patterned wafer. This study focused on the dark-field illumination method in near-field condition with simple modification of far-field imaging and illumination system which is designed by anamorphic optics and the potential of it is derived from experimental methods.

Paper Details

Date Published: 13 March 2018
PDF: 10 pages
Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058520 (13 March 2018); doi: 10.1117/12.2297506
Show Author Affiliations
Woojun Han, Myongji Univ. (Korea, Republic of)
Sunseok Yang, Myongji Univ. (Korea, Republic of)
Hangyeong Oh, Myongji Univ. (Korea, Republic of)
Yoongi Lee, Auros Technology (Korea, Republic of)
Jaisoon Kim, Myongji Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10585:
Metrology, Inspection, and Process Control for Microlithography XXXII
Vladimir A. Ukraintsev, Editor(s)

© SPIE. Terms of Use
Back to Top