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Proceedings Paper

Systematic assessment of the contributors of line edge roughness in EUV lithography using simulations
Author(s): Anindarupa Chunder; Azat Latypov; John J. Biafore; Harry J. Levinson; Todd Bailey
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Paper Abstract

Edge position variation in EUV patterns is significantly affected by stochastic phenomena that occur during the EUV exposure and the chemical processes in photoresist. Hence, it is important to understand and quantify the contribution of each of the stochastic effects to the edge roughness. In this work, various computational approaches are used based on the rigorous stochastic resist model in order to assess the stochastic contribution of photon absorption and random chemical reactions in EUV photoresist.

The simulation results are presented for both the traditional chemically amplified EUV resists and resists utilizing alternative mechanisms of image formation, such as metal based- resists.

Paper Details

Date Published: 19 March 2018
PDF: 14 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831N (19 March 2018); doi: 10.1117/12.2297492
Show Author Affiliations
Anindarupa Chunder, GLOBALFOUNDRIES Inc. (United States)
Azat Latypov, GLOBALFOUNDRIES Inc. (United States)
John J. Biafore, KLA-Tencor Corp. (United States)
Harry J. Levinson, GLOBALFOUNDRIES Inc. (United States)
Todd Bailey, GLOBALFOUNDRIES Inc. (United States)

Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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