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Proceedings Paper

Resist-polymer ablation by mid-infrared-free-electron laser
Author(s): Minoru Toriumi; Takayasu Kawasaki; Mitsunori Araki; Takayuki Imai; Koichi Tsukiyama
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Paper Abstract

Laser ablation of poly(4-hydroxystyrene) (PHOST) film was studied using mid-Infrared free-electron laser (mid-IR FEL), of which irradiation wavelength was tuned to the vibrational absorption peaks of PHOST in mid-IR spectral region. A PHOST film was ablated by mid-IR FEL light to produce a clear hole in a PHOST film which suggested the photochemical ablation. As the threshold energy for silicon ablation was larger than that of PHOST, it was possible to ablate a PHOST film without any damage to a silicon substrate. The ablation threshold-energy ratio for PHOST to silicon was less than 0.2 and depended on the mid-FEL wavelength. The ablation threshold for a PHOST film depended also on the film thickness. The highly efficient ablation by mid-IR FEL was found to be due to the vibrational excitations of C-O stretching and C-O-H bending of PHOST.

Paper Details

Date Published: 13 March 2018
PDF: 8 pages
Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 1058613 (13 March 2018); doi: 10.1117/12.2297163
Show Author Affiliations
Minoru Toriumi, Tokyo Univ. of Science (Japan)
Takayasu Kawasaki, Tokyo Univ. of Science (Japan)
Mitsunori Araki, Tokyo Univ. of Science (Japan)
Takayuki Imai, Tokyo Univ. of Science (Japan)
Koichi Tsukiyama, Tokyo Univ. of Science (Japan)

Published in SPIE Proceedings Vol. 10586:
Advances in Patterning Materials and Processes XXXV
Christoph K. Hohle, Editor(s)

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