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Proceedings Paper

3D memory: etch is the new litho
Author(s): Christopher Petti
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Paper Abstract

This paper discusses the process challenges and limitations for 3D NAND processes, focusing on vertical 3D architectures. The effect of deep memory hole etches on die cost is calculated, with die cost showing a minimum at a given number of layers because of aspect-ratio dependent etch effects. Techniques to mitigate these etch effects are summarized, as are other etch issues, such as bowing and twisting. Metal replacement gate processes and their challenges are also described. Lastly, future directions of vertical 3D NAND technologies are explored.

Paper Details

Date Published: 20 March 2018
PDF: 8 pages
Proc. SPIE 10589, Advanced Etch Technology for Nanopatterning VII, 1058904 (20 March 2018); doi: 10.1117/12.2297131
Show Author Affiliations
Christopher Petti, Western Digital Corp. (United States)

Published in SPIE Proceedings Vol. 10589:
Advanced Etch Technology for Nanopatterning VII
Sebastian U. Engelmann, Editor(s)

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