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Proceedings Paper

Potential and limitations for very-high-operating-temperature (VHOT) MWIR focal plane arrays using halogen-passivated PbSe
Author(s): David Shelton; Justin Sigley; Robert Nicholas; Ron Driggers
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Paper Abstract

Polycrystalline PbSe has the potential to be a V-HOT FPA capable of achieving 50 mK NETD sensitivity with pixel pitch less than 25 μm. However, current approaches using CBD have major reproducibility deficiencies. PVD approaches still struggle with sensitivity and carrier sweep-out. SJOS has explored a variety of PbSe approaches and determined the balance between carrier lifetime, mobility, dark current, and spectral QE that must be achieved in order to produce detectors that have low 1/f noise, high responsivity, and can fabricated reliably. SJOS detectors having these features are to be demonstrated in this presentation We will present data on the microstructure, blackbody performance data, and carrier mobility and lifetime for halogen passivated PbSe that can meet these demands.

Paper Details

Date Published: 22 June 2018
Proc. SPIE 10624, Infrared Technology and Applications XLIV, 1062411 (22 June 2018); doi: 10.1117/12.2295932
Show Author Affiliations
David Shelton, St. Johns Optical Systems (United States)
Justin Sigley, St. Johns Optical Systems (United States)
Robert Nicholas, Univ. of Central Florida College of Optics and Photonics (United States)
Ron Driggers, St. Johns Optical Systems (United States)
Univ. of Central Florida College of Optics and Photonics (United States)

Published in SPIE Proceedings Vol. 10624:
Infrared Technology and Applications XLIV
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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