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Proceedings Paper

Prediction of electronic and optical properties of ZnAl2Te4 defect chalcopyrite semiconductor: an ab-initio study
Author(s): Rishikanta Mayengbam; S. K. Tripathy; B. P. Pandey
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Paper Abstract

In this paper, we have investigated the structural, electronic and optical properties of ZnAl2Te4 defect chalcopyrite semiconductor using generalized gradient approximation (GGA) within density functional theory (DFT). We have calculated the optimized lattice constants (a and c) and compared with the available experimental values. The optimized lattice constants have been used to calculate the energy band gap and found to be 1.57 eV. The partial density of states and total density of states have been discussed in detail. The frequency dependent dielectric constant and refractive index have been calculated and plotted in the energy range 0-13 eV. All the above parameters have been compared with the available experimental and theoretical values and found good agreement between them.

Paper Details

Date Published: 6 March 2018
PDF: 4 pages
Proc. SPIE 10714, Third International Conference on Photonics Solutions (ICPS2017), 1071402 (6 March 2018); doi: 10.1117/12.2295700
Show Author Affiliations
Rishikanta Mayengbam, National Institute of Technology, Silchar (India)
S. K. Tripathy, National Institute of Technology, Silchar (India)
B. P. Pandey, GLA Univ. (India)


Published in SPIE Proceedings Vol. 10714:
Third International Conference on Photonics Solutions (ICPS2017)
Thawatchai Mayteevarunyoo, Editor(s)

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