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Proceedings Paper

A study of the semiconductor colour-sensing detector
Author(s): Biao Chen
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Paper Abstract

The semiconductor colour-sensing detector is composed of two parts: a colour-sensing device and a processing circuit. The design of the colour-sensing device is based on the principle of the colour mixture of the three base colours, light of different colours having different transmission depthes in silicon(red is the deepest, blue the shallowest, and green the medium). For the three depthes in silicon correspond to three base colours, plancediffusion technique or ion implantation technique is used to form three PNJs with different depthes and the PNJs filter colours automatically. When shone by white light, each of the three PNJs generates a photocurren simultaneously. When the three PNJs are shone by a light of one of the three base colours, only one photocurrent is generated by the corresponing PNJ.

Paper Details

Date Published: 1 July 1990
PDF: 2 pages
Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12300S (1 July 1990); doi: 10.1117/12.2294665
Show Author Affiliations
Biao Chen, North China Institute of Water Conservancy and Hydroelectric Power (China)

Published in SPIE Proceedings Vol. 1230:
International Conference on Optoelectronic Science and Engineering '90
DaHeng Wang, Editor(s)

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